We present optoelectronic characteristics of organic light-emitting devices
realized by Ion Beam Assisted Deposition (IBAD) of Alq3 (8-hydroxyquinoline aluminum)
layer between an ITO anode and a Ca/Al cathode. The ion type is Iodine ion and the
study against the ion beam energy (contained between 50 eV and 150 eV) indicates an
optimization of the optoelectronic properties (internal quantum efficiency and
luminance) at 100 eV while the optimized localization of the assisted layer is the
area 25–50 nm. The characteristics log (J) = f (log [V]) indicates that the
injection process takes place by trapped-charge-limited current and an estimation of
the trap density Nt leads to Nt ≈ 10 14 cm−3; the enhanced
optoelectronic properties of devices obtained by IBAD are attributed to the limitation
of quenching sites in the recombination area and also to charge carrier confinement at
the interface assisted layer and virgin (non-assisted) layer.